band k
英 [bænd keɪ]
美 [bænd keɪ]
【电】K波段
双语例句
- Combined Wide-Narrow Band CK Model for Radiative Heat Transfer of the Combustion Gas at High Temperature
高温燃气辐射合并宽窄谱带K分布模型 - An Observation on Yellow-Orange Diffuse Band of K_2
K2橙黄色扩散带的观察 - By applying T factor method of hot/ cold noise, at operating temperature 4.2 K, we have obtained the best measured results with Nb-Nb point contact junction: the single side band noise temperature TM-100 K and the Conversion efficiency.
采用冷、热噪声Y因子法，在4.2K的铌结上测得的单边带混频器噪声温度，变频效率。 - Conduction band structure of K 3C 60 single crystal films was studied at temperatures near 200 K.
研究了K3C60单晶薄膜在200K附近的导带结构。 - The result shows that there is band spectrum when argon is shocked to 1 2000 K, and no line spectrum is observed.
结果表明，在冲击到12000K温度下，氩气有带状辐射光谱，没有观察到线谱。 - The properties of density of states and band structure on KDP with K vacancy were discussed.
讨论了K空位形成后电荷密度的重新分布、相应的电子态密度和能带结构等性质。 - Uv-Vis test and temperature-change I-V test on F doped silica film, shows that there are intrinsic adsorption and exciton adsorption existed in the film. The energy band structure diagrammatic sketch of the low k material in MOS structure was obtained.
对掺F薄膜进行了Uv-Vis测试和变温的Ⅰ-Ⅴ测试，发现薄膜中存在着本征吸收和激子吸收两种吸收机制，并得到了该低k材料MOS结构样品的能带结构示意图。 - Band dispersions along the [ 111] direction could be observed at 190 K using synchrotron radiation photoemission spectra technique.
样品温度为190K时，同步辐射角分辨光电子谱能够观察到[111]方向有规律的能带色散。 - Band pass filters of PBG ( photonic band-gap) structures were analyzed based on the transmission line theory in this paper, and a novel K band dual-mode band-pass filter was designed and simulated by using this theoretical analysis.
本文应用传输线理论对PBG结构带通滤波器进行分析，并在此基础上仿真、设计一种新颖的K波段的双模带通滤波器。 - On the machanism of K_2 diffusion band produced by LIF
应用激光诱导荧光方法研究K2漫射带产生的机制 - K_ α band integrated planar mixer
Kα频段平面集成窄带混频器 - In PL spectra, an intense emission band coming from free excition luminescence of the quantum wells can be observed from 80 K to 300 K.
在80K到300K温度范围内，观测到了PL光谱中来自量子阱的自由激子发光，通过发光强度与温度的变化关系，计算了激子束缚能。 - By means of multiple-scattering cluster ( MSC) method. we have calculated the Si K-edge NEXAFS spectra of c-Si. It is shown that the in formation of the density of states of Si unoccupied band is included in NEXAFS spectra.
利用多重散射团簇方法（MSC）计算了单晶硅的K边NEXAFS谱，研究显示NEXAFS谱包含了导带态密度的信息。 - On the basis of that and targets for the project, this paper presents the scheme of S 、 X band and K band frequency synthesizer. After that, all of their indexes have been analyzed in theory to prove the feasibility of the scheme.
在此基础上，结合课题的具体指标，给出了S、X波段和K波段频率源的方案，并在理论上对各个指标进行了分析，论证了方案的可行性。 - In this dissertation, adopting the results acquired by the band selection of hyperspectral image based on ACO, the feature bands are extracted as simulation data, and the clustering method experiment is performed. The experiment results are compared with the results of traditional k-means algorithm.
本文依据基于蚁群算法的高光谱图像波段选择方法获得的选择结果，从中提取若干个特征波段作为数据源，采用上述聚类方法进行实验，并与传统的k均值算法比较实验结果。 - In the theoretical simulation, the scattering response character of irregular particles is described by using a response band with a floating coefficient K rather than a response curve.
在理论模拟中，用散射响应带描述了实际不规则颗粒的散射响应特性，并用浮动系数k进行了表征。 - Numerical simulation based on semiconductor theory, such as k-p method, is a fast and reliable way to study the characteristics of GaN-based LEDs, which is helpful to the study of band gap and carrier distribution, especially.
依据k·p方法等半导体理论对发光二极管的光电特性进行仿真模拟是一种快捷可靠的方法，有助于从能带、载流子分布等微观物理现象上对器件进行理论研究分析。 - Overall band structure diagram is obtained by DFT-LDA, and then GW approximation is used to correct band energies for some high symmetric k points to get accurate prediction.
总体的能带结构图是利用DFT-LDA得到，而随后采用GW近似方法对一些高对称k点的能级进行了修正，以期得到准确的预测值。